#BIPOLAR TRANSISTOR GAMMA SERIAL#
#BIPOLAR TRANSISTOR GAMMA DRIVER#

Combs, Comparison of ionizing-radiation-induced gain degradation in lateral, substrate and vertical PNP BJTs, IEEE T Nucl Sci 42 (1995) 1541-1549.ĭ.M. Ash, The Effects of Radiation on Electronic Systems, Van Nostrand Reinhold (1992).ĭ.M. Rincon-Mora, Analog IC design with low-dropout regulators, McGrawHill Education (2014). Quadri, Total dose effects: A new approach to asses the impact of radiation on device reliability, IEEE T Nucl Sci 60 (2013) 2266-2271. Witczak, Enhanced low-dose-rate sensitivity of a low-dropout voltage regulator, IEEE T Nucl Sci 45 (1998) 2571-2576. Platteter, Modeling total-dose effects for a low-dropout voltage regulator, IEEE T Nucl Sci 53 (2006) 3223-3231. Galloway, Total dose effects in a linear voltage regulator, IEEE T Nucl Sci 51 (2004) 3816-3821. Poirot, Total dose effects on negative voltage regulator.

#BIPOLAR TRANSISTOR GAMMA SERIAL#

The influence of bias and load conditions were analysed with buildup of interface traps and the oxide-trapped charge, which affected the radiation and post-irradiation response of the serial power transistor.

The emitter resistance increase of the serial power transistor was a primary reason for the low radiation tolerance of the entire voltage regulator it was much more influential than the perceived decline of the PNP power transistor forward emitter current gain. Detailed characteristics of Beta(Ic) were procured for four different kinds of bias and load conditions during irradiation. The effects of gamma-radiation were examined for total doses up to 500 Gy followed by three sequences of isothermal annealing. The serial lateral PNP power transistor with round emitters was identified as the weakest element that crucially affected the entire circuit radiation tolerance.

#BIPOLAR TRANSISTOR GAMMA DRIVER#

This model enabled mutual comparison of the influence of serial and driver PNP power transistor parameters: forward emitter current gain, knee current and emitter resistance. In order to obtain a more thorough insight into the radiation response of this integrated circuit, a detailed SPICE model was developed. Examination of this circuit in a gamma-radiation environment disqualified its use when operated with relatively high output currents, while its radiation tolerance was satisfactory when load current was approximately one-tenth (or lower) of the nominal value. The aim of this paper was to determine the reasons for a complex radiation response of the commercial-off-the-shelf LM2940CT5 low-dropout voltage regulator.

Bipolar transistor gamma